IndiumV3, Russie, Analysis, bibRecord, 000E98

Studies of the structure of defects in In4Se3 crystals by small-angle neutron scattering

Identifieur interne : 000E98 ( Russie/Analysis ); précédent : 000E97; suivant : 000E99

Studies of the structure of defects in In4Se3 crystals by small-angle neutron scattering

Auteurs : RBID : Pascal:98-0185410

Descripteurs français

Pascal (Inist)
- 6172J, 6475, 6172C, 6112E, Etude expérimentale, Indium composé, Matériau semiconducteur, Précipitation, Diffraction neutron, Recuit, Défaut ponctuel.

English descriptors

KwdEn :
- Annealing, Experimental study, Indium compounds, Neutron diffraction, Point defects, Precipitation, Semiconductor materials.

Abstract

Small-angle neutron scattering is used to study the layered semiconductor In₄Se₃. It is observed that the samples contain inhomogeneities of colloidal dimensions, which are attributed to the precipitation of indium. Annealing reduces the concentration of inhomogeneities. Modeling the system using an ensemble of primary spherical inhomogeneities showed that a single cluster of a rectangular superlattice (2-2-6) contains 24 primary inhomogeneities of radius 13.5±1,5 Å and the distance between them is 70.9±1.5 Å. © 1998 American Institute of Physics.

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Pascal:98-0185410

Le document en format XML

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Se<sub>3</sub>
 crystals by small-angle neutron scattering</title>
<author><name sortKey="Garamus, V M" uniqKey="Garamus V">V. M. Garamus</name>
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<country xml:lang="fr">Ukraine</country>
<wicri:regionArea>; I. Ya. Franko State University, 290000 Lvov</wicri:regionArea>
<wicri:noRegion>290000 Lvov</wicri:noRegion>
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</author>
<author><name sortKey="Islamov, A Kh" uniqKey="Islamov A">A. Kh. Islamov</name>
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<sZ>2 aut.</sZ>
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<country>Russie</country>
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<author><name sortKey="Pilat, Ya P" uniqKey="Pilat Y">Ya. P. Pilat</name>
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<country xml:lang="fr">Ukraine</country>
<wicri:regionArea>I. Ya. Franko State University, 290000 Lvov</wicri:regionArea>
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<author><name sortKey="Savchin, V P" uniqKey="Savchin V">V. P. Savchin</name>
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<front><div type="abstract" xml:lang="en">Small-angle neutron scattering is used to study the layered semiconductor In<sub>4</sub>
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Studies of the structure of defects in In4Se3 crystals by small-angle neutron scattering

Studies of the structure of defects in In4Se3 crystals by small-angle neutron scattering

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri